Papers

With Tag: Raman Scattering

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Comment on "Superconducting gap anisotropy vs. doping level in high-T_c cuprates" by C. Kendziora et al, PRL 77, 727 (1996)

Physical Review Letters | 1997 | 10.1103/PhysRevLett.78.4891

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Stimulated Raman scattering activity of organic compounds

Edward P C Lai, Wayne M Mullett, Hassan S Ghaziaskar
Vibrational Spectroscopy | 1993 | 10.1016/0924-2031(93)87009-I

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Slow light produced by far-off-resonance Raman scattering

Ha Qi Liang, Kohzo Hakuta, Fam Le Kien
IEEE Journal of Selected Topics in Quantum Electronics | 2003 | 10.1109/JSTQE.2002.807969

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Enhanced Raman Scattering by Fractal Clusters: Scale-Invariant Theory

Physical Review B | 1992

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Effect of a magnetic field on the two-phonon Raman scattering in graphene

Physical Review B | 2010 | 10.1103/PhysRevB.81.155436

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Structural and Magnetic Property of Ion Irradiated TiO2 Single Crystals

Chinese Journal of Chemical Physics | 2012 | 10.1088/1674-0068/25/01/19-24

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Mechanism of polarization enhancement in La-doped Bi4Ti3O12 films

R Palan, K Tran, C Y Yau, Relva C Buchanan
Applied Physics Letters | 2005 | 10.1063/1.1849422

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Synthesis of InP‐based 1.3 μm band gap pseudoalloy by organometallic vapor phase epitaxy

D T Emerson, J R Shealy
Applied Physics Letters | 1996 | 10.1063/1.117707

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Hot-electron luminescence in aged electrodeposited CdSe liquid-junction solar cell

Micha Tomkiewicz, R P Silberstein
Applied Physics Letters | 1983 | 10.1063/1.93724

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Stimulated Raman scattering of rapidly amplified short laser pulses

Physical Review Letters | 2000

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Linewidth of Tunable Stimulated Raman Scattering

Physical Review Letters | 1972

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Comments on ’’Raman scattering from boron‐implanted laser annealed silicon’’

D R Myers, Richard A Forman, M I Bell
Journal of Applied Physics | 1981 | 10.1063/1.329251

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Infrared reflection and Raman scattering of ion‐implanted nitrogen in gallium phosphide

W G Spitzer, T T Yang, J M Cherlow, A H Kachare, Ferdinand Euler
Journal of Applied Physics | 1976 | 10.1063/1.322338

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Resonant Raman scattering from buried AlxGa1−xN(x⩽0.17) layers in (Al, Ga, In)N heterostructures

Michael Kunzer, Harald Obloh, Manfred Maier, Masayuki Yoshikawa, Joachim Wagner
Journal of Applied Physics | 2000 | 10.1063/1.372268

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Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p–i–n nanostructure under subpicosecond laser excitation

R P Joshi, H Morkoc, A Salvador, A Botcharev, K T Tsen
Journal of Applied Physics | 1997 | 10.1063/1.364072

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Micro-Raman scattering and x-ray diffraction studies of (Ta2O5)1−x(TiO2)x ceramics

P S Dobal, R S Katiyar, Rongdi Guo, Yong Jiang, A S Bhalla
Journal of Applied Physics | 2000 | 10.1063/1.373597

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