Papers

With Tag: Photoluminescence

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Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition

Hark Hoe Tan, Yong Kim, C Jagadish, Qiang Gao, Hannah J Joyce
2007 | 10.1109/NEMS.2007.352082

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Surface modification of bulk n-InAs (111)A etched in bromine–methanol

Current Applied Physics | 2013 | 10.1016/j.cap.2012.08.012

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Formation and photoluminescence of Y 2 O 3 –H 3 BO 3 :Eu 3+ powders by mechanical alloying

Current Applied Physics | 2013 | 10.1016/j.cap.2012.09.005

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Blue and red emitting Eu activated CaMgSi 2 O 6 VUV phosphors

Kazuhito Ohmi, Ryo Yoshimatsu, Hisato Kobayashi, S Tanaka, Takashi Kunimoto, Alias Daud
2000 | 10.1109/SMELEC.2000.932449

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The detection filter choice of the OSL dating instrument

Ping Liang, Jihua Wen, Guangxiang Wang
2011 | 10.1109/EMEIT.2011.6023937

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Identification of Shallow Acceptors in Epitaxial GaN:Si

T S Shamirzaev, A Nikitin, A I Toropov, V G Mansurov, C S Zhuravlev, N S Korzhavina
2007 | 10.1109/SIBEDM.2007.4292908

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Synthesis and characterization of surface modified LaF3:Ce nano particles

Venkatraman, Kamarudin, Srinivasan, Ponraju, Arora
2011 | 10.1109/ICONSET.2011.6168023

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Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

X Y Yi, G H Wang, Y C Lee, Z Q Liu, B W Wang, He Jun Li, Y H Weng, J J Kang, Z C Feng, Zhifeng Li
Journal of Applied Physics | 2014 | 10.1063/1.4866815

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Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

A Marynski, G Atiya, J Andrzejewski, Wayne D Kaplan, C Gilfert, A Capua, O Karni, Gadi Eisenstein, S Kolling, D Gready, J Misiewicz, G Sĕk, J P Reithmaier, A Musial
Journal of Applied Physics | 2013 | 10.1063/1.4820517

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High resolution EL2 and resistivity topography of SI GaAs wafers

Melanie Wickert, J Wagner, P Hiesinger, M Jurisch, R Stibal, U Kretzer, W Jantz, B Weinert
Europace | 1998 | 10.1109/SIM.1998.785068

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Multiple stacking of self-assembled InAs quantum dots embedded by GaNAs strain compensating layers

Ryuji Oshima, Hidemi Shigekawa, Takayuki Hashimoto, Yoshitaka Okada
Journal of Applied Physics | 2006 | 10.1063/1.2359623

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Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

M A Reshchikov
Journal of Applied Physics | 2014 | 10.1063/1.4838038

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Synthesis and characterization of TbMnO 3 nanorods

S Sinha, A K Meikap, S Chatterjee, Aloke Kumar Mukherjee, S N Basu
2011 | 10.1109/ICONSET.2011.6167928

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Pyrazine luminogens with “free” and “locked” phenyl rings: Understanding of restriction of intramolecular rotation as a cause for aggregation-induced emission

Ian D Williams, Cathy K W Jim, Herman H Y Sung, Jacky W Y Lam, Faisal Mahtab, Jingzhi Sun, Li Tang, Anjun Qin, Ben Zhong Tang
Applied Physics Letters | 2009 | 10.1063/1.3137166

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Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures

H H Cheng, W P Huang, K Y Wang, Richard A Soref, Y W Suen, Greg Sun, R J Nicholas
Applied Physics Letters | 2007 | 10.1063/1.2771094

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Fabrication by rf-sputtering and diagnostics of Er 3+ /Yb 3+ - activated silicahafnia waveguides

Michel D Ferrari, C Tosello, Maurizio Montagna, E Moser, A Minotti, Gualtiero Nunzi Conti, C Armellini, A Chiappini, Giancarlo C Righini, A Chiasera, S Pelli, V Foglietti, Y Jestin
2007 | 10.1109/CLEOE-IQEC.2007.4386228

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Semi-insulating InP wafers obtained by Fe-diffusion

2005 | 10.1109/ICIPRM.2005.1517579

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Wafer characterization via sub-nanosecond time-correlated single photon counting

2012 | 10.1109/ASMC.2012.6212886

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Effects of annealing temperature on excitonic emissions from Na-implanted ZnO nanorods

Materials Letters | 2013 | 10.1016/j.matlet.2012.09.020

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