Papers

With Tag: Internal Quantum Efficiency

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Increase in internal quantum efficiency in small molecular oligothiophene: C60 mixed heterojunction solar cells by substrate heating

Karl Leo, David Wynands, Moritz Riede, Gregor Schwartz, Dirk Hildebrandt, Marieta Levichkova, Christian Uhrich, M Pfeiffer
Applied Physics Letters | 2010 | 10.1063/1.3475766

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Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes

Sangheon Han, Sangjun Lee, Taeyoung Park, Chuyoung Cho, Seung Hyun Park, Y C Kim, Je Won Kim, Sang Won Kang, Taehun Kim
Applied Physics Letters | 2010 | 10.1063/1.3302458

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High efficiency and fast modulation of Er‐doped light emitting Si diodes

S Coffa, F Priolo, G Franzo
Applied Physics Letters | 1996 | 10.1063/1.116885

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Analysis of InGaN High-Brightness Light-Emitting Diodes.

Japanese Journal of Applied Physics | 1998

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Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters

Daniel R Fuhrmann, Carsten Netzel, Heiko Bremers, U Rossow, Andreas Hangleiter, G Ade, P Hinze
Physica Status Solidi (c) | 2006 | 10.1002/pssc.200565374

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Silicon Detector Arrays with Absolute Quantum Efficiency over 50% in the Far Ultraviolet for Single Photon Counting Applications

P A Morrissey, B Jacquot, Michael E Hoenk, Shouleh Nikzad, Jordana Blacksberg, David Schiminovich, Chris Martin, T J Jones, Steve P Monacos, Erika T Hamden, Frank Greer
2011 | 10.1364/AO.51.000365

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Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications

D J Friedman, Sarah R Kurtz, A J Ptak, R C Reedy
Journal of Applied Physics | 2005 | 10.1063/1.2113414

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Nanoporous TiO2/Cu1.8S heterojunctions for solar energy conversion

Materials Science and Engineering: C | 2002

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Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

Kie Young Woo, Heedong Kim, Tae Geun Kim, Kyeong Heon Kim, Su Jin Kim, Ho Young Chung
Superlattices and Microstructures | 2013 | 10.1016/j.spmi.2013.09.014

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High power, high brightness Al-free active region tapered lasers at 915 nm

I Hassiaoui, M Calligaro, M Lecomte, N Michel, O Parillaud, M Krakowski
2006 | 10.1117/12.663048

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GHz bandwidth GaAs light-emitting diodes

Marian Crawford Hargis, M R Melloch, J M Woodall, C H Chen, Jeffrey S Reynolds, Wei Wang, Eli Yablonovitch
Applied Physics Letters | 1999 | 10.1063/1.124092

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GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure

IEEE Photonics Technology Letters | 2012 | 10.1109/LPT.2012.2190053

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Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaN

S D Arthur, D W Merfeld, Stephen F Leboeuf, Mark Philip Develyn, X A Cao
2004 | 10.1117/12.566040

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Intrawell and interwell intersubband transitions in multiple quantum wells for far‐infrared sources

J H Smet, Qing Hu, Clifton G Fonstad
Journal of Applied Physics | 1996 | 10.1063/1.362607

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Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes

H W Choi, R W Martin, P R Edwards, M D Dawson, C W Jeon, S Tripathy
Journal of Applied Physics | 2003 | 10.1063/1.1567803

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Theoretical calculations of the minority‐carrier diffusion length in high‐internal‐quantum‐efficiency GaAs

A Lastrasmartinez
Journal of Applied Physics | 1979 | 10.1063/1.326416

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