Papers

With Tag: Extreme Ultraviolet Lithography

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Finite Element Analysis of Alternating Phase-Shift Masks Subjected to Dynamic Pressure Loading Due to Megasonic Cleaning

Kyriakos Komvopoulos, X Yin
2008 | 10.1109/EPTC.2008.4763473

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A Mask Generation Approach to Double Patterning Technology with Inverse Lithography

Japanese Journal of Applied Physics | 2008 | 10.1143/JJAP.47.8333

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Absolute calibration of a 1.5m grazing incidence monochromator for extreme ultraviolet (EUV) diagnostics of a plasma source

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 2007 | 10.1016/j.nimb.2007.04.017

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Next generation lithography-implications

Journal of The American College of Surgeons | 1997 | 10.1109/IEMT.1997.626943

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Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography

2015 | 10.1117/12.2175841

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Impact of mask line roughness in EUV lithography

2011 | 10.1117/12.879463

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Laser-produced plasma source system development

Proceedings of SPIE | 2008 | 10.1117/12.806648

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Considerations for cost of ownership in EUV lithography

Proceedings of SPIE | 2011 | 10.1117/12.894707

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Illuminating EUVL mask defect printability

2012 | 10.1117/12.977853

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The material design to reduce outgassing in acetal-based chemically amplified resist for EUV lithography

Kazuyoshi Mizutani, Yasumasa Kawabe, Seiya Masuda, Shoichiro Yasunami, Shuuji Hirano, Sou Kamimura, Yasutomo Kawanishi
2006 | 10.1117/12.656238

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Study on photochemical analysis system (VLES) for EUV lithography

Mikio Kadoi, Paul A Blackborow, Atsushi Sekiguchi, David A Gustafson, Yasuyuki Kono, Yasuhiro Minami, Takahiro Kozawa, Seiichi Tagawa
2007 | 10.1117/12.710516

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Extreme Ultraviolet Spectroscopy of a Laser Plasma Source for Lithography

R K F J Bastiaensen, F Bijkerk, L A Shmaenok, A P Shevelko, S S Churilov
Physica Scripta | 1998 | 10.1088/0031-8949/57/2/023

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Pattern Inspection of EUV Masks Using DUV Light

Edita Tejnil, Alan R Stivers, Ted Liang
2002 | 10.1117/12.467298

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Removal of carbon and nanoparticles from lithographic materials by plasma assisted cleaning by metastable atom neutralization (PACMAN)

M Neumann, V Surla, D N Ruzic, R E Lofgren, W M Lytle
2010 | 10.1117/12.846282

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Mask availability for next-generation lithography

Carey T Williams, Kenneth C Racette, Mark Lawliss, Chester Huang, Emily Fisch, Louis Kindt, Michael J Lercel
2002 | 10.1117/12.479342

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Status of EUV-lamp development and demonstration of applications

Klaus Bergmann, Oliver Rosier, Willi Neff, Konstantin Walter, Larissa Juschkin, Thomas Missalla, Ulrich Bieberle, Bernhard Jaegle, Christian Wies, Manfred Meisen, Max Christian Schuermann, Rainer Lebert
2004 | 10.1117/12.538058

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Soft X-rays and Extreme Ultraviolet Radiation: MULTILAYER INTERFERENCE COATINGS

David T Attwood
1999 | 10.1017/CBO9781139164429.005

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Rigorous model for registration error due to EUV reticle non-flatness and a proposed disposition and compensation technique

2007 | 10.1117/12.707136

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Nonspecular scattering from extreme ultraviolet multilayer coatings

Physica B-condensed Matter | 2000 | 10.1016/S0921-4526(99)01897-9

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EUV lithography development in Europe: present status and perspectives

T Ceccotti
2004 | 10.1117/12.510247

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