Papers

With Tag: Dielectric Breakdown

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PB‐SON RFLDMOS characteristics analysis

Compel-the International Journal for Computation and Mathematics in Electrical and Electronic Engineering | 2013 | 10.1108/03321641011014986

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Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO{sub 2} films

Akihiro Ishida, Shigeyasu Uno, Kenji Taniguchi, Kazuaki Deguchi, Yoshinari Kamakura
Journal of Applied Physics | 2001 | 10.1063/1.1370087

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The influence of morphology on electrical tree initiation in polyethylene

Hiromasa Fukagawa, Naohiro Hozumi, Masayoshi Ishida, Tatsuki Okamoto
1988 | 10.1109/ISEIM.1988.763456

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Inspection processes must compliment systems inspected

William E Larsen, C Teal
2002 | 10.1109/DASC.2002.1052996

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Length scales of interactions in magnetic, dielectric, and mechanical nanocomposites

E F Schubert, D J Sellmyer, Ralph Skomski, B Balamurugan, A Enders
2011 | 10.1557/opl.2011.109

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The universal dielectric response and its physical significance

1991 | 10.1109/ICPADM.1991.172343

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Electrostatic discharge damage of MR heads

Hong Tian, Jerry J K Lee
IEEE Transactions on Magnetics | 1995 | 10.1109/20.490073

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Effects of O2- and N2-Plasma Treatments on Copper Surface

Japanese Journal of Applied Physics | 2004 | 10.1143/JJAP.43.7415

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The Influence of Inert Gas Addition on Electric Breakdown Utilizing Dielectric Barrier Discharge in Ozone Generation in Air

Linsheng Wei, Guopan Dong, Yafang Zhang, Dingkun Yuan, Zhaoji Hu
Ozone-science & Engineering | 2014

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Characterization of polybenzimidazole (PBI) film at high temperatures

J L Suthar, Ahmad Hammoud
1990 | 10.1109/ELINSL.1990.109793

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Discharge structure on the dielectric surface of a pin-to-plane DBD in argon at atmospheric pressure

Yuri Akishev, Grigori I Aponin, Vladimir Karalnik, M E Grushin, N I Trushkin
IEEE Transactions on Plasma Science | 2005 | 10.1109/TPS.2005.845886

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Behavior of SiO2 Under High Electric Field/Current Stress Conditions

1986 | 10.1109/IRPS.1986.362138

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Investigation of the intrinsic SiO/sub 2/ area dependence using TDDB testing

1997 | 10.1109/IRWS.1997.660275

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Hole detrapping effect on gate oxide breakdown under DC and AC stress

2000 | 10.1109/IRWS.2000.911921

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