Papers

With Tag: Dielectric Breakdown

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The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs

Adrian Koh, Olayiwola Alatise, Khalid Mohammed Khan, Jim Parkin, Keith Heppenstall, Ian M Kennedy, P A Rutter, George Petkos
IEEE Transactions on Electron Devices | 2010 | 10.1109/TED.2010.2049062

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Projecting gate oxide reliability and optimizing reliability screens

Chenming Hu, Reza Moazzami
IEEE Transactions on Electron Devices | 1990 | 10.1109/16.55751

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Rectangular Dielectric‐loaded Structures for Achieving High Acceleration Gradients

Viacheslav P Yakovlev, Changbiao Wang, T Marshall, J L Hirshfield, M A Lapointe
2006 | 10.1063/1.2409233

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Fabrication and dielectric property of ferroelectric PLZT films grown on metal foils

Materials Research Bulletin | 2011 | 10.1016/j.materresbull.2011.02.047

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Enhancement of mechanical and dielectric breakdown properties by diffusion of SiC into lead zirconate titanate ceramics

Hong Yang, Xianlin Dong, Chaoliang Mao, Heng Chen, Tao Zeng
Scripta Materialia | 2006 | 10.1016/j.scriptamat.2006.07.040

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Scaling considerations and dielectric breakdown improvement of a corrugated capacitor cell for a future dRAM

Shinji Shimizu, Tokuo Kure, Kunihiro Yagi, Hiroyuki Miyazawa, Yasuo Wada, Ken Yamaguchi, Hideo Sunami
IEEE Transactions on Electron Devices | 1985 | 10.1109/T-ED.1985.21942

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Study of P/E Cycling Endurance Induced Degradation in SANOS Memories Under NAND (FN/FN) Operation

C Sandhya, N Chattar, Souvik Mahapatra, J Vasi, Apoorva B Oak, L Date, Udayan Ganguly, Catherine M Olsen, Raymond Hung, S M Seutter
IEEE Transactions on Electron Devices | 2010 | 10.1109/TED.2010.2048404

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n/sup +/-poly-to-n/sup +/-silicon capacitor structures for single-poly analog CMOS and BiCMOS processes

Tiani Liou, Chihsieh Teng
IEEE Transactions on Electron Devices | 1989 | 10.1109/16.34222

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Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film

Akio Nakagawa, Yoshiro Baba, Norio Yasuhara
IEEE Transactions on Electron Devices | 1991 | 10.1109/16.85162

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Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

U K Mishra, Shreepad Karmalkar
IEEE Transactions on Electron Devices | 2001 | 10.1109/16.936500

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Reverse breakdown in GaAs MESFET's

Mark P Zaitlin
IEEE Transactions on Electron Devices | 1986 | 10.1109/T-ED.1986.22721

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High-voltage planar devices using field plate and semi-resistive layers

P Rossel, G Charitat, J M Reynes, D Jaume
IEEE Transactions on Electron Devices | 1991 | 10.1109/16.85167

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BCB with nano-filled BaSrTiO 3 for thin film capacitors

2009 | 10.1109/ECTC.2009.5074101

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The Nonlinearity Factors in Analysis of a Conductive Arc Track

Avraham L Tslaf
IEEE Transactions on Plasma Science | 1983 | 10.1109/TPS.1983.4316272

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Reliability behavior of TaAlOx Metal-Insulator-Metal capacitors

2009 | 10.1109/IPFA.2009.5232720

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Oil Stresses in Impregnated-Paper Insulation

J B Whitehead
Transactions of The American Institute of Electrical Engineers | 1945 | 10.1109/T-AIEE.1945.5059173

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Effect of Oil Pressure on Insulation Strength

J A Scott
Transactions of The American Institute of Electrical Engineers | 1934 | 10.1109/T-AIEE.1934.5056625

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Voltage and Current Harmonics Caused by Corona

F W Peek
Transactions of The American Institute of Electrical Engineers | 1921 | 10.1109/T-AIEE.1921.5060741

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A Three-Cycle 3,500-Megavolt-Ampere Air-Blast Circuit Breaker for 138,000-Volt Service

H L Byrd, B S Beall
Transactions of The American Institute of Electrical Engineers | 1945 | 10.1109/EE.1945.6441014

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The Dielectric Strength of Air Films Entrapped in Solid Insulation and a Practical Application of the Problem for Alternator Coils and Cables

F Dubsky
Transactions of The American Institute of Electrical Engineers | 1919 | 10.1109/T-AIEE.1919.4765612

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