Papers

With Tag: Dielectric Breakdown

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Breakdown and conduction mechanisms of ALD HfSiON dielectric with TaN gate using carrier separation analysis [MOSFETs]

S G Park, Sang Bom Kang, Hajin Lim, Yunseok Kim, Jong Pyo Kim, Seok Joo Doh, Hokyu Kang, Sung Kee Han, Naein Lee, M J Kim, Hyungsuk Jung, J H Lee
2005 | 10.1109/RELPHY.2005.1493177

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Theoretical Studies on the Dielectric Breakdown of the SiO_2 Thin Films

Noriko Ohta, Toshikazu Takada, Yuji Mochizuki, Ayumi Yokozawa, Akihiko Ishitani
1994

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Characterization of silicon gate oxides by conducting atomic force microscopy

Surface and Interface Analysis | 2002 | 10.1002/sia.1183

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Moisture resistance of thin film electrical insulation A comparison of test methods

Membrane Technology | 1993 | 10.1109/EEIC.1993.631241

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"Coupling thermal step method and thermo-stimulated currents in polymers"

Jose Aurelio Santana, K Joumha, A Toureille
1994 | 10.1109/CEIDP.1994.591739

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Investigation of vacuum insulator surface dielectric strength with nanosecond pulses

G J Caporaso, W C Nunnally, C J R Williams, F V Allen, D O Trimble, M Krogh, Stephen E Sampayan
2003 | 10.1109/PPC.2003.1277715

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Energy consumption at electrical disintegration of brittle solids

I V Timoshkin, U Andres
1998 | 10.1109/ICSD.1998.709322

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On the application of the “enlargement law” to cable lines

Massimo Marzinotto
2005 | 10.1109/PTC.2005.4524345

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High-Pressure Oxidation for Thin Gate InsuIator Process

IEEE Journal of Solid-state Circuits | 1982 | 10.1109/JSSC.1982.1051705

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Ultralow Specific On-Resistance Superjunction Vertical DMOS With High- $K$ Dielectric Pillar

IEEE Electron Device Letters | 2012 | 10.1109/LED.2012.2196969

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Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator

IEEE Electron Device Letters | 2009 | 10.1109/LED.2009.2029876

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Electrical breakdown strength of alumina at high temperatures

Journal of the American Ceramic Society | 1981 | 10.1111/j.1151-2916.1981.tb09879.x

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Time behavior of stimulated Raman scattering

R J Collins, Audun Hordvik
IEEE Journal of Quantum Electronics | 1970 | 10.1109/JQE.1970.1076449

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Over-estimate of Thin Dielectric Lifetime in Single Doping Type Poly-Gate Capacitors

Howard L Tigelaar, S J Wang, I C Chen
IEEE Transactions on Electron Devices | 1991 | 10.1109/DRC.1991.664733

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Process and reliability of air-gap Cu interconnect using 90-nm node technology

S Uno, Tatsuyuki Saito, K Sato, Tsuyoshi Tamaru, Takayuki Oshima, K I Ishikawa, Tsuyoshi Fujiwara, Nobuhiro Konishi, Youhei Yamada, Hiroshi Ashihara, Hideo Aoki, Junji Noguchi, Maki Kubo
IEEE Transactions on Electron Devices | 2005 | 10.1109/TED.2005.843886

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