Papers

With Tag: Dielectric Breakdown

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To the Memor of Professor Yoshio Inuishi

M Ieda
1995 | 10.1109/ISEIM.1995.496497

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A X-band resonant ring and gas breakdown experiments

Daniel J Hoppe, Rafael Perez
1992 | 10.1109/MWSYM.1992.188160

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Breakdown Conditions of Local Sheath Discharge in Front of Positively Biased Electrode Immersed in Inductively Coupled Plasma

Kyoungjae Chung, Yeongshin Park, Y S Hwang
2007 | 10.1109/PPPS.2007.4345475

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Effect of yttrium compounds on sintering of aluminum nitride

D V Glotov, T M Sarkisyan, I G Kuznetsova, M D Chernetskaya, N A Popova
Glass and Ceramics | 1994

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DC breakdown voltage characteristics of small air gaps with insulating barriers in non-uniform field

Ozcan Kalenderli, K Mardikyan, Alper Kara
2010 | 10.1109/ICHVE.2010.5640737

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Study on dielectric properties of PMN-PZN-PT ferroelectric relaxor ceramics

Zhilun Gui, Xiaowen Zhang, Longtu Li
1991 | 10.1109/ICPADM.1991.172192

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BREAKDOWN CHARACTERISTICS OF 63 AND 90 KV INSULATOR STRINGS, IN THE CASE OF LIGHTNING AND SWITCHING

Michel Poloujadoff, A Xemard, Antoine Petit, J F Guillier
1993 | 10.1109/PPC.1993.513342

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Basic Properties of an LC Filter Using a Thin-Film Inductor

K I Arai, Mitsugi Yamaguchi, Ken Ishihara
IEEE Translation Journal on Magnetics in Japan | 1994 | 10.1109/TJMJ.1994.4565845

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High-voltage microdischarge in ultra-low background /sup 3/He proportional counters

IEEE Transactions on Nuclear Science | 2000 | 10.1109/23.914454

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A new AC dielectric breakdown test method of stator coils for high‐voltage rot at ing machinery

Electrical Engineering in Japan | 1984 | 10.1002/eej.4391040602

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Initial breakdown field strength and area effect under DC voltages in SF6 gas

Electrical Engineering in Japan | 1979 | 10.1002/eej.4390990302

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The effect of electrode tilt angle on the characteristics of coplanar dielectric barrier discharges with Xe-Ne mixtures

Seung Bo Shim, In Cheol Song, Hae June Lee
Journal of Applied Physics | 2011 | 10.1063/1.3606407

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Dielectric strength of two series connected vacuum interrupters

V A Sidorov, G S Belkin, L A Rylskaya, Yu G Romochkin, D F Alferov, A A Pertsev
2008 | 10.1109/DEIV.2008.4676734

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Calculation of electric field-induced detachment rate of electrons from mononegative ions; relevance to gaseous dielectrics

H C Schweinler, L G Christophorou
1980 | 10.1016/B978-0-08-025978-9.50006-8

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Intrinsic reliability projections for a thin JVD silicon nitride gate dielectric in P-MOSFET

IEEE Transactions on Device and Materials Reliability | 2001 | 10.1109/7298.946454

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Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

IEEE Transactions on Device and Materials Reliability | 2010 | 10.1109/TDMR.2010.2077295

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