Papers

With Tag: Dielectric Breakdown

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Sulfur Hexafluoride SF 6

Daniel Lauzon, Hermann Koch
IEEE Transactions on Power Systems | 2006 | 10.1109/PES.2008.4596619

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Epoxy Resin-Orlon Cable Terminations for 33-Kv Service

Transactions of The American Institute of Electrical Engineers. Part Iii: Power Apparatus and Systems | 1959 | 10.1109/AIEEPAS.1959.4500488

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Thermal Analysis of Transformer Load Cycles

Transactions of The American Institute of Electrical Engineers. Part Iii: Power Apparatus and Systems | 1958 | 10.1109/AIEEPAS.1958.4499853

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Effects of Insulation Thickness on the Aging of Organic Insulation in Air [includes discussion]

Transactions of The American Institute of Electrical Engineers. Part Iii: Power Apparatus and Systems | 1956 | 10.1109/AIEEPAS.1956.4499278

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PD-related stresses in the bulk dielectric and their evaluation

A M L Pedersen, I W Mcallister, G C Crichton
1993 | 10.1109/CEIDP.1993.378927

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Implications of high field dipolar saturation in solid dielectrics

S A Boggs, Yang Cao
1998 | 10.1109/ELINSL.1998.704702

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Criteria for Vacuum Breakdown in RF Cavities

IEEE Transactions on Nuclear Science | 1983 | 10.1109/TNS.1983.4336689

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Electrical characteristics of CeO/sub 2/ buffer layer for a FRAM

2000 | 10.1109/ISAF.2000.942400

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Teflon-FEP charged by microsecond voltage pulses: numerical results and model

Ingénierie Des Systèmes D'information | 1996 | 10.1109/ISE.1996.578067

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From wafer-level gate-oxide reliability towards ESD failures in advanced CMOS technologies

Andreas Kerber, Manfred Kerber, C E Wallace, Lincoln Oriain, M M Rohner
IEEE Transactions on Electron Devices | 2006 | 10.1109/TED.2006.870517

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Consistent model for short-channel nMOSFET after hard gate oxide breakdown

B Kaczer, V Simons, R Degraeve, K Van De Mieroop, G Groeseneken, A De Keersgieter
IEEE Transactions on Electron Devices | 2002 | 10.1109/16.987123

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A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

Maryam Shojaei Baghini, Mayank Shrivastava, V Ramgopal Rao, Harald Gossner, Ruchil Jain
IEEE Transactions on Electron Devices | 2010

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Research Progress on C -band Broadband Multibeam Klystron

Yunshu Zhu, Y Miao, Xiuling Yin, Bin Shen, Xiaoxin Sun, Caiying Wang, Yaogen Ding
IEEE Transactions on Electron Devices | 2007 | 10.1109/TED.2007.892354

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Current limited stresses of SiO/sub 2/ gate oxides with conductive atomic force microscope

Xavier Aymerich, Marc Porti, Montserrat Nafria
IEEE Transactions on Electron Devices | 2003 | 10.1109/TED.2003.812082

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High power TWT for satellite communication

J A Ruetz, K W Slocum, W A Harman
IEEE Transactions on Electron Devices | 1969 | 10.1109/T-ED.1969.16676

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Experience from on-site condition assessment of XLPE MV cables

2006 | 10.1109/ELINSL.2006.1665350

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