Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon

S N Kumar , A Laugier , B Canut , G Chaussemy

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/paper/doi/10.1063/1.100414	0.000000	0.000000
INIT	0.003213	0.003213
_initView	0.012584	0.015797
_initViewBasic	0.001539	0.017336
_initSiteModules	0.002524	0.019860
_initRouters	0.002683	0.022543
pre dispatch _	0.022839	0.045382
LC::doiAction START	0.000446	0.045828
LC::doiAction END to showListing	0.298848	0.344676
LC::showListing START	0.000009	0.344685
LC::showListing get reviews START	0.003911	0.348596
ES Review Search START	0.007274	0.355870
ES Review Search END	0.047482	0.403352
LC::showListing get reviews END	0.000053	0.403405
Done	0.020345	0.423750