State-of-the-art performance is demonstrated from a carbon nanotube enabled vertical field effect transistor using an organic channel material. The device exhibits an on/off current ratio >10 5 for a gate voltage range of 4 V with a current density output exceeding 50 mA/cm 2 . The architecture enables submicrometer channel lengths while avoiding high-resolution patterning. The ability to drive high currents and inexpensive fabrication may provide the solution for the so-called OLED backplane problem.
In this manuscipt, a high current low voltage carbon nanotube (CN) enabled vertical organic field-effect transistor (VOFET) is reported that have the future potential to drive the pixels in active matrix organic light emitting diode (AMLED).
CN enabled VOFET potential to drive pixels in AMLED
In this manuscipt, a high current low voltage carbon nanotube (CN) enabled vertical organic field-effect transistor (VOFET) is reported that have the future potential to drive the pixels in active matrix organic light emitting diode (AMLED).
Usually,...